
	Part Number	Hot Search : 2SA1588 2SK2229 00102 P4034 SH702 RG801 CXA19 LVC4245A
	Product Description
	Full Text Search

K4R271669A - 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

K4R271669A_323024.PDF Datasheet

Part No.

K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7

Description

256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size

4,046.09K / 64 Page

Maker

SAMSUNG[Samsung semiconductor]
Samsung Electronic

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4R271669B-NCK8

Maker: SAMSUNG

Pack: BGA

Stock: Reserved

Unit price for :

50: $6.46

100: $6.14

1000: $5.82

Email: oulindz@gmail.com

Contact us

Homepage

http://www.samsung.com/Products/Semiconductor/

Download

[ K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from Datasheet.HK

]
[K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for K4R271669A ]

[ Price & Availability of K4R271669A by FindChips.com ]

Full text search : 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

Related Part Number

PART	Description	Maker
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).	Samsung Electronic SAMSUNG[Samsung semiconductor]
TMOV34S131MX2696 TMOV34S151MX2696 TMOV34S201MX2696	RESISTOR, VOLTAGE DEPENDENT, 175 V, 270 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 200 V, 300 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 265 V, 335 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 369 V, 400 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 420 V, 460 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 506 V, 550 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 610 V, 620 J, THROUGH HOLE MOUNT	Vicor, Corp.
K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R27	256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 256 × 16/18位2 16属银行直接RDRAMTM	Sunon, Inc. SAMSUNG SEMICONDUCTOR CO. LTD.
KM416RD8AS-RBM80	128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package	SAMSUNG SEMICONDUCTOR CO. LTD.
KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80	128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package	Samsung Electronic SAMSUNG[Samsung semiconductor]
MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0	(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片，32秒银行，32K/32ms参考，.5V (32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
MOV-10D220KTR MOV-10D180KTR MOV-10D121KTR MOV-10D1	RESISTOR, VOLTAGE DEPENDENT, 18 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 14 V, 2.1 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 100 V, 18 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 125 V, 22 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 56 V, 8.2 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 275 V, 43 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 350 V, 65 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 85 V, 15 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 505 V, 70 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 200 V, 35 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 38 V, 5.5 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 640 V, 80 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT RESISTOR, VOLTAGE DEPENDENT, 620 V, 75 J, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT	Bourns, Inc.
GS88132BT-150IV	512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100	GSI Technology, Inc.
GS880E32AT-250	512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100	GSI Technology, Inc.

Related keyword From Full Text Search System

K4R271669A npn transistor	K4R271669A Technolog	K4R271669A baumer ivo gxmmw	K4R271669A UNITED CHEMI CON	K4R271669A laser diode
K4R271669A infineon	K4R271669A serial	K4R271669A price	K4R271669A Address	K4R271669A Ic-on-line